PILATUS4 for Laboratories

PILATUS4 R detectors enable fast data collection, thanks to their large active area and high quantum efficiency.

With their high quantum efficiency (greater than 95%) and their large active area of up to 155 x 162 mm, PILATUS4 R CdTe detectors enable fast data collection using any X-ray source from Cu to In. In particular, for Mo, Ag, and In radiation, PILATUS4 R CdTe outperforms any HPC detector with a Si sensor – even PILATUS3, which has the thickest Si sensor available. And for instruments that primarily use Cu or Ga radiation, our PILATUS4 detectors with Si sensors deliver the same great performance.

A dynamic range spanning ten orders of magnitude is achieved through PILATUS4’s superior count rates and the absence of any detector background. Internal frame rates of up to 200 Hz improve the count-rate correction and ensure highly accurate measurement of strong intensities. With four energy-discriminating thresholds, PILATUS4 offers new possibilities in Laue diffraction and spectral imaging.

✓ Large & efficient: Active areas of up to 155 x 162 mm, with more than 95% quantum efficiency
✓ High dynamic range thanks to zero detector background, superior count rates, and simultaneous read/write.
✓ Versatile: High quantum efficiency from Cu to In; four energy-discriminating thresholds for polychromatic applications

Publications

PILATUS4 R Detectors*

	PILATUS4 R 1M	PILATUS4 R 260K	PILATUS4 R CdTe 260K-W
Active area (W x H) [mm²]	155.0 x 162.0	77.0 x 79.5	155.0 x 38.3
Pixel array (W x H)	1033 x 1080	513 x 530	1033 x 255
Pixel size (W x H) [µm²]		150 x 150
Energy range [keV]	CdTe: 8 - 25 CdTe with extended calibration¹: 8 - 100 Si: 6 - 40	CdTe: 8 - 25 CdTe with extended calibration¹: 8 - 100 Si: 6 - 40	CdTe: 8 - 25 CdTe with extended calibration¹: 8 - 100
Number of energy thresholds		4
Threshold range [keV]	CdTe: 4 - 30 CdTe with extended calibration¹: 4 - 80 Si: 4 - 30	CdTe: 4 - 30 CdTe with extended calibration¹: 4 - 80 Si: 4 - 30	CdTe: 4 - 30 CdTe with extended calibration¹: 4 - 80
Count rate [ph/s/pixel]	CdTe: 5.0 * 10⁶ Si: 3.1 * 10⁶	CdTe: 5.0 * 10⁶ Si: 3.1 * 10⁶	CdTe: 5.0 * 10⁶
Frame rate (max.) [Hz]	10	100	100
Readout time^₂		Continuous readout
Sensor material	Cadmium telluride (CdTe) or Silicon (Si)	Cadmium telluride (CdTe) or Silicon (Si)	Cadmium telluride (CdTe)
Sensor thickness [µm]	CdTe: 1000 Si: 450	CdTe: 1000 Si: 450	CdTe: 1000
Point-spread function (FWHM) [pixels]		1
Dimensions (W x H x D) [mm³]	235 x 237 x 372	114 x 133 x 242	192 x 92 x 277
Weight [kg]	15	4.7	4.7

FULL TECHNICAL SPECIFICATIONS AND USER DOCUMENTATION.

*All specifications are subject to change without notice.
¹ With optional calibration for an extended energy range.
²The effective dead time between exposures is < 100 ns (max. loss of 1 count/pixel).